10. A CMOS-MEMS Accelerometer with U-channel Suspended Gate SOI FET
(with Pramod Martha and V. Seena)
IEEE Sensors Journal, vol. 21 issue 9.
Suspended gate transistors can be used as inertial sensors, wherein the displacement of the gate relative to the channel
can be sensed and used as a measurement of acceleration. In these transistors, the gate is physically far from the channel (few 100's of nm at least)
which results in poor gate control over the channel, affecting its performance. This is very similar to short channel effects which happen in scaled MOSFETs.
However, unlike MOSFETs for which short channel effects start becoming apparent at lengths of sub 100 nm, for suspended gate FETs these effects are significant even for
channel lengths of a few μm due to poor gate control. In this paper, we show how these "Pseudo-short-channel" effects can be reduced by using a U-channel SOI FET.