Ms. Shikha Kumari published her research work titled “Modified TCAD simulation approach for 4H-SiC JBS diode to investigate electron trapping effects” in Microelectronics Reliability Journal.

Ms. Shikha Kumari published her research work titled “Modified TCAD simulation approach for 4H-SiC JBS diode to investigate electron trapping effects” in Microelectronics Reliability Journal. The device characterization and simulation facilities at IIT Dharwad were used for this cutting-edge research. This work is benefited by the collaboration with Ampere Lab, INSA Lyon, France. We would like to thank Prof. Mayank Shrivastava and his research team for performing high-voltage reverse IV measurements at MSD Lab, IISc, India. The paper can be accessed through this shared link: https://lnkd.in/dHpk_cqG