A manuscript by Ms. Shikha Kumari et al., titled “Performance-Limiting Trapping Effects in n-type Ga₂O₃ Schottky Barrier Diodes,” has been published in IEEE Transactions on Device and Materials Reliability (TDMR)

A manuscript by Ms. Shikha Kumari et al., titled “Performance-Limiting Trapping Effects in n-type Ga₂O₃ Schottky Barrier Diodes,” has been published in IEEE Transactions on Device and Materials Reliability (TDMR) (https://lnkd.in/dVnaYgQg). 

The baseline TCAD model of the Ga₂O₃ Schottky Barrier Diode was developed by B.Tech students Mr. Shreesh Singh and Mr. Kumar Piyush during their R&D project. Subsequently, Ms. Shikha Kumari extended the model to investigate charge trapping effects and carried out systematic studies. As a result, a reliable TCAD model has been developed to evaluate trapping effects on Ga₂O₃ SBD performance, which could benefit the Ga₂O₃ scientific community.